specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 4 july 2010 ecp052d ? watt, high linearity ingap hbt amplifier product features ? 800 ? 1000 mhz ? 18 db gain @ 900 mhz ? +28.5 dbm p1db ? +44 dbm output ip3 ? single positive supply (+5v) ? lead-free/green/rohs-compliant 16-pin 4x4mm qfn package applications ? final stage amplifiers for repeaters ? mobile infrastructure product description the ecp052d is a high dynamic range driver amplifier in a low-cost surface mount package. the ingap/gaas hbt is able to achieve hi gh performance for various narrowband-tuned application circuits with up to +44 dbm oip3 and +28.5 dbm of compressed 1db power. it is housed in an industr y standard in a lead-free/ green/rohs-compliant 16-pin 4x4mm qfn surface- mount package. all devi ces are 100% rf and dc tested. the ecp052d is targeted for us e as a driver amplifier in wireless infrastructure where high linearity and medium power is required. an internal active bias allows the ecp052d to maintain high linearity over temperature and operate directly off a single +5v supply. this combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3g base stations. functional diagram function pin no. vref 1 rf input 3 rf output 10, 11 vbias 16 gnd backside paddle n/c or gnd 2, 4-9, 12-15 specifications parameter units min typ max operational bandwidth mhz 800 1000 test frequency mhz 850 gain db 17 output p1db dbm +28 output ip3 (2) dbm +44 test frequency mhz 900 gain db 15.5 17.8 input return loss db 18 output return loss db 7 output p1db dbm +27 +28.7 output ip3 (2) dbm +42.5 +43 is-95a channel power @ -45 dbc acpr, 1960 mhz dbm +23 noise figure db 7 quiescent current, icq ma 200 250 300 device voltage, vcc v +5 1. test conditions unless otherwise noted: 25 oc, vsuppl y = +5 v, in tuned application circuit. 2. 3oip measured with two tones at an output power of +11 db m/tone separated by 1 mhz. the suppression on the largest im3 pro duct is used to calculate the 3oip using a 2:1 rule. 3. this corresponds to the quiescent current or operating curren t under small-signal conditions into pins 6, 7, and 8. it is expected that the current can increase by an additional 50 ma at p1db. pin 1 is used as a reference voltage for the internal biasing circuitry. it is expected that pin 1 will pull 12ma of current when used with a ser ies bias resistor of r1=100 . (ie. total device curre nt typically will be 262 ma.) absolute maximum rating parameter rating storage temperature -65 to +150 c rf input power (continuous) +22 dbm device voltage +8 v device current 400 ma device power 2 w thermal resistance, rth 60 c/w junction temperature +200 c operation of this device above any of th ese parameters may cause permanent damage. ordering information part no. description ECP052D-G ?-watt, high linearity ingap hbt amplifier (lead-free/green/rohs-compliant 16-pin 4x4mm qfn package) ecp052d-pcb900 900 mhz evaluation board standard tape / reel size = 1000 pieces on a 7? reel 1 2 3 4 12 11 10 9 16 15 14 13 5 6 7 8 n/c rf out rf out n/c vre f n/c rf in n/c vbias n/c n/c n/c n/c n/c n/c n/c
specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 4 july 2010 ecp052d ? watt, high linearity ingap hbt amplifier typical device data s-parameters (v cc = +5 v, i cc = 250 ma, t = 25 c, unmatched 50 ohm system) 50 550 1050 1550 2050 2500 frequency (mhz) gain / maximum stable gain 0 5 10 15 20 25 30 35 40 gain (db) db(|s(2,1)|) db(gmax()) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5. 0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3. 0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0. 2 0 . 2 - 0 . 2 0.4 0 .4 - 0 .4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 1000mhz swp min 50mhz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 1000mhz swp min 50mhz notes: the gain for the unmatched device in 50 ohm system is shown as th e trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gain is shown in the dashed red line. the return loss plots are shown from 50 ? 1000 mhz, with marker s placed at .05, 0.1 and 0.2 ? 1 ghz in 0.2 ghz increments. s-parameters (v cc = +5 v, i cc = 250 ma, t = 25 c, unmatched 50 ohm system, calibrated to device leads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -2.08 -167.47 25.81 121.88 -34.39 20.06 -2.85 -128.57 100 -1.60 -176.25 21.21 119.02 -33.70 10.30 -3.46 -152.91 200 -1.55 177.39 17.43 119.68 -34.57 -0.55 -3.77 -165.97 400 -1.57 168.97 14.31 113.15 -35.33 -4.58 -3.57 -165.83 600 -1.76 160.42 13.39 106.07 -33.51 -4.12 -1.91 -168.71 800 -1.97 153.20 12.83 91.91 -33.13 -16.00 -1.70 -177.38 1000 -2.43 145.24 12.08 78.04 -30.97 -28.08 -2.05 177.99 1200 -3.12 137.49 11.67 64.05 -30.23 -36.11 -2.30 175.47 1400 -4.43 127.55 11.46 48.41 -30.25 -46.25 -2.36 174.66 1600 -7.08 115.61 11.47 30.39 -29.61 -62.25 -2.41 173.61 1800 -14.24 109.36 11.30 7.39 -28.18 -82.41 -2.06 171.18 2000 -16.59 -142.19 10.56 -17.73 -28.42 -109.55 -1.64 168.93 2200 -7.06 -146.15 8.89 -43.22 -29.33 -134.21 -1.22 162.93 2400 -3.67 -163.93 6.53 -65.55 -30.99 -158.32 -1.18 155.95 2600 -2.10 179.98 3.89 -83.84 -32.78 179.11 -1.43 149.66 2800 -1.47 166.40 1.31 -98.81 -36.21 169.00 -1.39 144.07 3000 -1.06 153.09 -1.27 -112.21 -36.60 140.50 -1.60 138.31 application circuit pc board layout circuit board material: .014? getek, 4 - layer, 1 oz copper, microstrip li ne details: width = .026?, spacing = .026? the silk screen markers ?a?, ?b?, ?c?, etc. and ?1?, ?2?, ?3?, etc. are used as placemarkers for the input and out put tuning shunt capacitors ? c8, c9 and c10. the markers and vias are spaced in .050? increments .
specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 4 july 2010 ecp052d ? watt, high linearity ingap hbt amplifier 900 mhz application circ uit (ecp052d-pcb900) typical rf performance at 25 c id=c6 c=10 pf id=c2 c=22 pf id=l1 l=33 nh id=c3 c=56 pf id=c11 r=0 ohm id=r3 r=51 ohm id=c1 c=22 pf tlinp id=tl2 z0=50 ohm l=600 mil eeff=3.16 loss=0 f0=0 ghz id=c9 c=2 pf id=c7 c=1000 pf id=c4 c=1e7 pf id=r1 r=100 ohm id=r2 r=22 ohm id=c5 c=1000 pf 1 2 3 4 5678 9 10 11 12 13 14 15 16 id=ecp52d vsupply = +5v size 1008 the transmission line lengths are from the edge of the device pins to the center of the component. all passive components are size 0603 unless otherwise noted. the center of c9 should be +5.6v zener placed at silkscreen marker '12' on the wj evaluation board. s21 vs frequency 10 12 14 16 18 20 840 860 880 900 920 940 frequency (mhz) s21 ( db ) +25c +85c -40c s11 vs. frequency -35 -30 -25 -20 -15 -10 -5 0 840 860 880 900 920 940 frequency (mhz) s11 ( db ) +25c +85c -40c s22 vs. frequency -35 -30 -25 -20 -15 -10 -5 0 840 860 880 900 920 940 frequency (mhz) s22 ( db ) +25c +85c -40c noise figure vs. frequency 0 2 4 6 8 10 840 860 880 900 920 940 frequency (mhz) nf ( db ) +25c +80c -40c p1 db vs. frequency 20 22 24 26 28 30 840 860 880 900 920 940 frequency (mhz) p1 db ( dbm ) +25c +85c -40c acpr vs. channel power is-95, 9 ch. fw d, 885khz me as bw, 900 mhz -80 -75 -70 -65 -60 -55 -50 -45 -40 18 19 20 21 22 23 24 output channel power (dbm) acpr (dbm ) +25c +85c -40c oip3 vs. temperature freq. = 900, 901 mhz, +13 dbm /tone 35 37 39 41 43 45 -40 -15 10 35 60 85 temperature (c) oip3 (dbm) oip3 vs. output power freq. = 900, 901 mhz, +25c 35 37 39 41 43 45 8 101214161820 output power (dbm) oip3 ( dbm ) oip3 vs. frequency +25, +13 dbm / tone 35 37 39 41 43 45 840 860 880 900 920 940 frequency (mhz) oip3 (dbm) frequency 900 mhz s21 ? gain 17.5 db s11 ? input return loss -18 db s22 ? output return loss -7 db output p1db +28.7 dbm output ip3 ( +11 dbm / tone, 1 mhz s p acin g) +43 dbm channel power (@ -45 dbc acpr, is-95 9 channels fwd ) +23 dbm noise figure 7 db device / supply voltage +5 v quiescent current 250 ma
specifications and information are subject to change without notice triquint semiconductor inc ? phone 1-503-615-9000 ? fax: 503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 4 july 2010 ecp052d ? watt, high linearity ingap hbt amplifier ECP052D-G mechanical information this package is lead-free/green/ro hs-compliant. it is compatible with both lead- free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the platin g material on the pins is an nealed matte tin over copper . outline drawing e052g land pattern product marking the component will be marked with an ?e052g? designator with an alphanumeric lot code on the top surface of the package. the obsolete tin-lead package is marked with an ?ecp052d? designator followed by an alphanumeric lot code. tape and reel specifications for this part are located on the website in the ?application notes? section. esd / msl information esd rating: class 1b value: passes between 500 and 1000v test: human body model (hbm) standard: jedec standard jesd22-a114 msl rating: level 2 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. a heatsink underneath the ar ea of the pcb for the mounted device is recommended for proper thermal operation. damage to the device can occur without the use of one. 2. ground / thermal vias are critical for the proper performance of this device. vias should use a .35mm (#80 / .0135?) diameter drill and have a final plated thru diameter of .25 mm (.010?). 3. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. mounting screws can be adde d near the part to fasten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 5. do not put solder mask on the backside of the pc board in the region where the board contacts the heatsink. 6. rf trace width depends upon the pc board material and construction. 7. use 1 oz. copper minimum. 8. all dimensions are in millimeters (inches). angles are in degrees.
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